Multi-patterning, finFETs and more are forcing more detailed overhauls of P&R software at each process node. We dig into some of the key new issues and how they are being addressed.
The 10nm generation is the follow-on process to the 14nm/16nm node and will provide a choice of either finFET or planar FD-SOI architectures. But the likely absence of EUV will increase costs.
The 14nm and 16nm processes cover a range of technologies and are designed to succeed the 20nm generation. They bring with them a number of design challenges.
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